BiCMOS integration using a shared SiGe layer
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United States of America Patent
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May 21, 2019
Grant Date -
Oct 22, 2015
app pub date -
Mar 17, 2015
filing date -
Apr 16, 2014
priority date (Note) -
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Abstract
A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a PNP bipolar device in a bipolar region, and an NPN bipolar device in the bipolar region. The BiCMOS device includes also includes a silicon-germanium (SiGe) layer over a base of the PNP bipolar device and over a selectively implanted collector of the NPN bipolar device, wherein a first portion of the SiGe layer forms a base of the NPN bipolar device, and a second portion of the SiGe layer forms an emitter of the PNP bipolar device.
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