WAFER PROCESSING METHOD
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United States of America Patent
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Issued Date -
Oct 22, 2015
app pub date -
Apr 13, 2015
filing date -
Apr 17, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A processing method for a wafer has a substrate and a laminated layer formed on the substrate. The laminated layer forms a plurality of crossing division lines and a plurality of devices formed in separate regions defined by the division lines. A groove is formed in the laminated layer along each division line by using a cutting blade. A modified layer is formed by applying a laser beam to the substrate along the division lines from the back side of the wafer in the condition where the focal point of the laser beam is set inside the substrate, thereby forming a modified layer inside the substrate along each division line. An external force is applied to the wafer, thereby dividing the wafer along each division line to obtain a plurality of individual chips.
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