SILICON PRECURSOR, METHOD OF FORMING A LAYER USING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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app pub date -
Jan 22, 2015
filing date -
Apr 16, 2014
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Abstract
The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.
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