Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconducting wire
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 2, 2018
Grant Date -
Oct 22, 2015
app pub date -
Aug 23, 2013
filing date -
Oct 5, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum Δϕ of a peak based on the pole figure of the copper layer is within 5° and the tail width Δβ of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1st step of performing heat treatment of a copper layer so that Δϕ is within 6° and the tail width Δβ is within 25°, and after the 1st step, a 2nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1st step, so that Δϕ is within 5° and the tail width Δβ is within 15°.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully