POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD

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United States of America Patent

SERIAL NO

14589847

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Abstract

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It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

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Patent Owner(s)

Patent OwnerAddress
TRUTAG TECHNOLOGIES INC2045 LAUWILIWILI STREET UNIT 301 KAPOLEI HI 96707

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Crafts, Doug Los Gatos, US 2 15
Kamian, George D Scotts Valley, US 23 302
Kramer, Karl-Josef San Jose, US 57 964
Moslehi, Mehrdad M Los Altos, US 307 13906
Nag, Somnath Saratoga, US 29 772
Tamilmani, Subramanian San Jose, US 18 231

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