RF Power Transistor
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United States of America Patent
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Issued Date -
Oct 15, 2015
app pub date -
Mar 25, 2015
filing date -
Apr 15, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device including an RF power transistor in a semiconductor package is described. The semiconductor device comprises a gate lead frame, a drain lead frame, a die including a power transistor having a gate and a drain and a flange. A gate impedance matching network is connected between the gate lead frame and the gate. A drain impedance matching network is connected between the drain lead frame and the drain and includes a drain lead frame bond wire between the drain lead frame and the drain. A first conducting element is connected between the die and the flange and is arranged to provide a current path along which a return current can flow in use to lower an inductance associated with the drain lead frame bond wire.
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