ROOM-TEMPERATURE BONDED DEVICE, WAFER HAVING ROOM-TEMPERATURE BONDED DEVICE, AND ROOM-TEMPERATURE BONDING METHOD
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Nov 26, 2013
filing date -
Nov 27, 2012
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Abstract
A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO2, GaN and LiTaO3. The other of the first surface and the second surface contains an inorganic material such as silicon, SiO2, quartz and Au. The inorganic materials of the first surface and the second surface may be same or may be different.
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