Semiconductor resistive memory devices including separately controllable source lines
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United States of America Patent
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Apr 11, 2017
Grant Date -
Oct 15, 2015
app pub date -
Jan 30, 2015
filing date -
Apr 14, 2014
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Abstract
A magnetic memory device can include a plurality of separately controllable magnetic memory segments configured to store data. A plurality of separately controllable source lines can each be coupled to a respective one of the plurality of separately controllable magnetic memory segments.
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