SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Issued Date -
Oct 1, 2015
app pub date -
Mar 24, 2015
filing date -
Mar 27, 2014
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Abandoned
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Abstract
An object is to realize a semiconductor light-emitting element having further increased light extraction efficiency than before, and a production method therefor. The method for producing a semiconductor light-emitting element of the present invention includes: a step (a) of preparing a substrate; a step (b) of forming a first semiconductor layer, an active layer and a second semiconductor layer on the upper layer of the substrate in this order from below; a step (c) of forming a first conductive layer constituting a reflective electrode on the upper layer of the second semiconductor layer; a step (d) of forming a second conductive layer, without previously conducting annealing, constituting a first protective layer in a thickness of equal to or less than 7 nm on an upper surface of the first conductive layer after the step (c); and a step (e) of conducting annealing after the step (d).
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