Multi-junction Thin-Film Silicon Solar Cells with a Recrystallized Silicon-based Sub-Cell
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United States of America Patent
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Oct 1, 2015
app pub date -
Mar 25, 2014
filing date -
Mar 25, 2014
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Abandoned
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Abstract
This application relates to systems and methods for multi-junction solar cells that includes at least one recrystallized silicon layer. The recrystallized silicon lay may have a microcrystalline structure following a heat treatment or laser treatment of an amorphous silicon layer. The multi-junction solar cell may be a p-i-n or n-i-p structure that may include a p-type doped silicon layer, an intrinsic silicon layer, and an n-doped silicon layer. In one embodiment, the intrinsic layer in either type of structure may be the recrystallized silicon layer.
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