FINFET DEVICES WITH DIFFERENT FIN HEIGHTS IN THE CHANNEL AND SOURCE/DRAIN REGIONS
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United States of America Patent
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app pub date -
Jun 8, 2015
filing date -
Dec 16, 2013
priority date (Note) -
Abandoned
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Abstract
One method disclosed includes, forming a sacrificial gate structure trench in a stack of sacrificial material layers, forming a sacrificial gate structure within the trench, performing at least one process operation to remove at least portions of the stack of sacrificial material layers and thereby expose sidewalls of the sacrificial gate structure, forming a sidewall spacer adjacent the exposed sidewalls of the sacrificial gate structure, removing the sacrificial gate structure so as to define a replacement gate cavity between the spacers, forming a replacement gate structure in the replacement gate cavity, and forming a gate cap above the replacement gate structure within the replacement gate cavity.
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