Importance

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Abstract

A semiconductor device is provided that comprises first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type above the second semiconductor region, a gate insulating film on the second semiconductor region between the third semiconductor region and the first semiconductor region, a gate electrode provided along the second semiconductor region with the gate insulating film interposed therebetween, a Schottky electrode on the first semiconductor region exposed at a bottom of a trench extending from an upper surface of the third semiconductor region and reaching the first semiconductor region, and a first main electrode electrically connected to the Schottky electrode and the third semiconductor region. A Schottky barrier diode is arranged on an interface between the Schottky electrode and the first semiconductor region.

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First Claim