METHOD FOR PREPARING SILICIDE OF A SEMICONDUCTOR DEVICE AND A SOURCE/DRAIN FOR USE IN THE SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Oct 1, 2015
app pub date -
Mar 27, 2015
filing date -
Mar 27, 2014
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Abandoned
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Abstract
Provided herein is a method for forming silicide of a semiconductor device and a source/drain for use in the semiconductor device, the method including preparing a silicon substrate that includes silicon; depositing ytterbium, refractory metal and transition metal nitride on the silicon substrate so that the ytterbium and the refractory metal form an ytterbium alloy thin film and the transition metal nitride form a capping layer; and heating the silicon substrate to form ytterbium silicide on an interface between the silicon substrate and the ytterbium alloy thin film.
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