Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
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United States of America Patent
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Apr 28, 2020
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Oct 1, 2015
app pub date -
Oct 25, 2013
filing date -
Oct 26, 2012
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Abstract
The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).
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