METHOD FOR FORMING OXIDE THIN FILM AND METHOD FOR FABRICATING OXIDE THIN FILM TRANSISTOR EMPLOYING GERMANIUM DOPING
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United States of America Patent
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Oct 1, 2015
app pub date -
Mar 17, 2015
filing date -
Mar 28, 2014
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Abstract
The present invention disclosed herein relates to a method for forming an oxide film and a method for fabricating an oxide thin film transistor, and more particularly, to a method for forming an oxide film and a method for fabricating an oxide thin film transistor which employ a germanium doping. A method for forming an oxide thin film according to an embodiment of the present invention, the method includes: applying a metal compound on a substrate; and heat-treating the substrate, wherein the metal compound solution is prepared by dissolving an indium compound, a zinc compound and a germanium compound in a solvent.
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