METHOD FOR FABRICATING SEMICONDUCTOR DEVICES HAVING HIGH-PRECISION GAPS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 1, 2015
app pub date -
Mar 27, 2015
filing date -
Apr 1, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present disclosure provides a method for fabricating semiconductor devices having high-precision gaps. The method includes steps of providing a first wafer; forming two or more regions having various ion dosage concentrations on a first surface of the first wafer; thermally oxidizing the first wafer so as to grow oxide layers with various thicknesses on the first surface of the first wafer; and bonding a second wafer to the thickest oxide layer of the first wafer so as to form one or more gaps.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully