VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
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United States of America Patent
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Oct 1, 2015
app pub date -
Mar 27, 2015
filing date -
Mar 31, 2014
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Abstract
A vapor phase growth apparatus according to embodiments includes: a reaction chamber; a first reservoir container storing a first organic metal; a source gas supply passage receiving a main carrier gas and supplying a source gas containing the first organic metal to the reaction chamber; a thermostatic room containing the first reservoir container and configured to have an internal temperature set higher than an external temperature thereof; a first carrier gas supply passage supplying a first carrier gas to the first reservoir container; a first organic metal-containing gas transfer passage connected outside the thermostatic room to the source gas supply passage to transfer a first organic metal-containing gas containing the first organic metal generated by bubbling or sublimation in the first reservoir container; and a dilution gas transfer passage connected inside the thermostatic room to the first organic metal-containing gas transfer passage transferring a dilution gas.
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