Advanced Back Contact Solar Cells
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United States of America Patent
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Issued Date -
Sep 24, 2015
app pub date -
Mar 20, 2014
filing date -
Mar 20, 2014
priority date (Note) -
Abandoned
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Abstract
An improved method of manufacturing a back contact solar cell is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A mask paste is applied to the tunnel oxide layer. Silicon is deposited on the tunnel oxide layer. The placement of the mask paste causes discrete regions of deposited silicon to be created. Using a shadow mask, dopant is implanted into one or more of these discrete and separate regions. After the implanting of dopant, metal is sputtered onto the deposited silicon to create electrodes. Following the deposition of the metal layer, the mask paste is removed, such as using a wet etch process. The resulting solar cell has discrete doped regions each with a corresponding electrode applied thereon. These discrete doped regions are separated by a gap, which extends to the tunnel oxide layer.
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