PATTERNED STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Sep 24, 2015
app pub date -
Mar 20, 2014
filing date -
Mar 20, 2014
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Abandoned
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Abstract
The invention is directed to a method for fabricating a patterned structure of semiconductor device. First, a target layer and a hard mask layer are sequentially formed on a substrate. Then, a patterned photoresist layer having at least one photoresist stripe is formed to partially cover the hard mask layer. Thereafter, an ion-implant process is performed on hard mask layer with the patterned photoresist layer as a mask to form doped regions therein. Afterwards, at least one acid-crosslinked polymer spacer is formed on the sidewalls of at least one photoresist stripe to surpass a resolution limit of the patterned photoresist layer. Specifically, the patterned photoresist layer and the at least one acid-crosslinked polymer spacer are configured to define a plurality of first openings in the hard mask layer, and the doped regions of the hard mask layer is configured to further define a plurality of second openings therein.
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