GAS CLUSTER ION BEAM ETCHING PROCESS
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United States of America Patent
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app pub date -
Jun 4, 2015
filing date -
Sep 1, 2011
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Abandoned
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Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.
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