Method for Performing Erase Operation in Non-Volatile Memory

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United States of America Patent

APP PUB NO 20150270004A1
SERIAL NO

14221079

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Abstract

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A method for performing an erase operation in a non-volatile memory incorporates the steps of selecting a block on which to perform an erase operation; erasing the selected block using a plurality of erase pulses; receiving erase data of the selected block; determining an over-erase correction verify voltage level based on the erase data; and over-erase correcting the selected block until each cell within the selected block passes the over-erase correction verify voltage level.

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Patent Owner(s)

Patent OwnerAddress
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INCNO 23 GONGYE E 4TH RD EAST DIST HSINCHU CITY 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TSAI, Cheng-Hung New Taipei City, TW 58 857

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