METHOD FOR READING A THIRD-DIMENSIONAL EMBEDDED RE-WRITEABLE NON-VOLATILE MEMORY AND REGISTERS
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United States of America Patent
Stats
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N/A
Issued Date -
N/A
app pub date -
Jun 3, 2015
filing date -
Feb 5, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A non-volatile register includes register logic connected with first and second ends of a memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
First Claim
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