NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING EXCELLENT BRIGHTNESS AND ESD PROTECTION PROPERTIES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 17, 2015
app pub date -
Oct 15, 2013
filing date -
Oct 22, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Disclosed is a nitride semiconductor light-emitting device having excellent brightness and ESD protection properties. The nitride semiconductor light-emitting device according to the present invention includes an electron blocking layer that is disposed between a p-type nitride semiconductor layer and an active layer, wherein said electron blocking layer includes AlInGaN, and the concentration of indium increases in the electron blocking layer as said layer progressively moves away from the active layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully