SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 17, 2015
app pub date -
Mar 16, 2015
filing date -
Mar 17, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for manufacturing a light-emitting element made of a GaN-based semiconductor with an MOCVD method includes the steps of: growing an n-type semiconductor layer; growing an active layer on the n-type semiconductor layer; and growing a p-type AlGaN-based semiconductor layer on the active layer while maintaining a concavo-convex surface with a depth of 1 to 5 nm.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully