CIS/CGS/CIGS THIN-FILM MANUFACTURING METHOD AND SOLAR CELL MANUFACTURED BY USING THE SAME
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Dec 26, 2012
filing date -
Sep 17, 2012
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Abandoned
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Abstract
Provided are a CIS/CGS/CIGS thin-film manufacturing method and a solar cell manufactured by using the same. The CIS/CGS/CIGS thin-film manufacturing method enables CIS, CGS, and CIGS thin-films through depositing an electrode layer on a substrate and depositing a light absorber layer by sputtering a single target of each of CIS including copper (Cu), indium (In), and selenium (Se) and CGS copper (Cu), gallium (Ga) and selenium (Se). In addition, a solar cell having excellent structural, optical and electrical properties is prepared by using the same. Thus, a thin-film can be prepared by depositing a CIG, CGS, or CIGS light absorber layer with a single sputtering process by using a single target of each of CIS (CuInSe2) and CGS (CuGaSe2), to thereby enable to manufacture thin-films of various characteristics according to a control of a composition ratio of In and Ga as well as simplification of the process, and to thus provide a very favorable effect on the economics and efficiency.
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