INTERMEDIATE BAND SEMICONDUCTORS, HETEROJUNCTIONS, AND OPTOELECTRONIC DEVICES UTILIZING SOLUTION PROCESSED QUANTUM DOTS, AND RELATED METHODS

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United States of America Patent

APP PUB NO 20150263203A1
SERIAL NO

14438512

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Abstract

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A semiconductor includes first quantum dots and second quantum dots of a lesser amount, which are dispersed throughout the first quantum dots. The second quantum dots have a different size or composition than the first quantum dots such that the second quantum dots have a first exciton peak wavelength longer than a first exciton peak wavelength of the first quantum dots. The quantum dot layer includes a valence band, a conduction band, and an intermediate band having an energy level within a bandgap between the valence band and the conduction band. The quantum dots may be solution processed. The semiconductor may be utilized to form an electronic heterojunction, and optoelectronic devices including the electronic heterojunction.

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Patent Owner(s)

Patent OwnerAddress
RESEARCH TRIANGLE INSTITUTE3040 CORNWALLIS ROAD RESEARCH TRIANGLE PARK NC 27709

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Klem, Ethan Durham, US 10 195
Lewis, John Durham, US 169 5309

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