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Abstract

A thin film transistor and a manufacturing method for the same are provided. The thin film transistor comprises a substrate, a double channel semiconductor layer, a semiconductor passivation layer, a gate, a gate dielectric layer, a source and a drain. The double channel semiconductor layer comprises a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is made of a metallic oxide semiconductor material and formed above the substrate. The second semiconductor layer is made of the metallic oxide semiconductor material doped by an oxygen gettering metal and formed on the first semiconductor layer. The semiconductor passivation layer is formed on the second semiconductor layer. The gate is formed above the substrate. The gate dielectric layer is formed between the gate and the double channel semiconductor layer. The source and drain are close to the double channel semiconductor layer, formed above the substrate and electrically connected to the double channel semiconductor layer.

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First Claim