SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Aug 12, 2014
filing date -
Mar 13, 2014
priority date (Note) -
Abandoned
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Abstract
A semiconductor memory device according to an embodiment comprises: a nonvolatile memory cell and a control circuit. The control circuit executes: a first write operation that performs a write on the memory cell using a first write voltage; a first verify operation that determines whether a threshold voltage of the memory cell exceeds a first threshold value due to the first write operation, or not; a second verify operation that re-determines on the memory cell that has passed the first verify operation whether the threshold voltage exceeds the first threshold value, or not; and a second write operation that performs a write on the memory cell that has not passed the second verify operation, using a second write voltage.
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