PREDICTING LED PARAMETERS FROM ELECTROLUMINESCENT SEMICONDUCTOR WAFER TESTING
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Jun 1, 2015
filing date -
Aug 21, 2011
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Abstract
A diode model and conductive-probe measurements taken at the wafer lever are used to predict the characterization parameters of a semiconductor device manufactured from the wafer. A current-voltage curve (I-V) model that expresses a current-voltage relationship as a function of resistance, ideality factor, and reverse saturation current is fitted to a number of conductive-probe measurement data. The current-voltage curve (I-Vd) for the device is then estimated by subtracting from the (I-V) model the product of current times the resistance produced by fitting the (I-V) model.
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