APPARATUS AND METHODS FOR MANUFACTURING INGOT

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United States of America Patent

APP PUB NO 20150259824A1
SERIAL NO

14257177

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Abstract

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There is disclosed an ingot manufacture method to grow a first ingot from molten silicon in a crucible, the ingot manufacture method including growing at least a portion of the first ingot in a state where the height of the molten silicon which the crucible is filled with, is kept at a first level for a first period, and changing the height of the molten silicon into a second level different from the first level from the first level for a second period after the first period.

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Patent Owner(s)

Patent OwnerAddress
TECHNOVALUE CO LTD701 WORLD MERDIAN BIZ CENTER 15-1 YANGPYEONGDONG 3-GA YEONGDEUNGPO-GU SEOUL 150-103

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kwon, Hyun Goo Uiwang, KR 6 13
Son, Min Soo Seoul, KR 5 13
Yoon, Yeo Kyun Hwaseong, KR 8 47

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