Asteriated Substrate for Light Emitting Diodes
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Mar 14, 2014
filing date -
Mar 14, 2014
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Abandoned
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Abstract
Optical extraction efficiencies for GaN based light emitting diodes may be improved by forming titanium dioxide inclusions in a sapphire based substrate. These inclusions increase optical scattering of light that has been injected into the sapphire, thereby improving overall performance of the light emitting diode. A portion of the titanium dioxide inclusions may extend to one or more surfaces of the sapphire. Selective etching may be performed on the surface of the sapphire prior to epitaxial growth of the GaN based light emitting diode. This allows formation of a textured sapphire surface in a single process step without the use of photolithography. This process step as well as additional selective etching of exposed titanium dioxide on other surfaces of sapphire may be performed to further increase LED performance.
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