INDIUM-CONTAINING CONTACT AND BARRIER LAYER FOR III-NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR DEVICES
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United States of America Patent
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Issued Date -
Sep 10, 2015
app pub date -
Mar 10, 2014
filing date -
Mar 10, 2014
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Abstract
A high electron mobility transistor device includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a contact and barrier layer on the channel layer, the contact and barrier layer being made of indium aluminum nitride with a plurality of indium precipitates exposed on the surface of the contact and barrier layer. The plurality of indium precipitates exposed on the surface of the contact and barrier layer enable metal contacts to be formed directly on the contact and barrier layer with reliable and repeatable electrical performance. The contact and barrier layer may be epitaxially grown in a metal organic chemical vapor deposition process where a ratio of group-V precursors to group-III precursors is low and a flow rate of an indium precursor is greater than a flow rate of an aluminum precursor.
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