Method and Apparatus for Plasma Dicing a Semi-conductor Wafer

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United States of America Patent

SERIAL NO

14721462

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Abstract

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The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

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Patent Owner(s)

Patent OwnerAddress
PLASMA-THERM LLC10050 16TH STREET NORTH ST PETERSBURG FL 33716

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Grivna, Gordon M Mesa, US 227 2763
Johnson, Chris St. Petersburg, US 112 4405
Johnson, David Cleveland, US 456 10383
Martinez, Linnell Lakeland, US 35 281
Pays-Volard, David St. Petersburg, US 28 247
Westerman, Russell Land O' Lakes, US 58 785

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