ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY AND STORAGE ARRAY OF THE SAME
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United States of America Patent
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Issued Date -
Sep 10, 2015
app pub date -
Dec 29, 2014
filing date -
Mar 5, 2014
priority date (Note) -
Abandoned
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Abstract
An Electrically Erasable Programmable Read-Only Memory (EEPROM) and an EEPROM storage array are provided. The EEPROM storage array includes: at least one storage area, wherein the storage area includes M word lines in a row direction, 8 bit lines in a column direction, N source lines in the row direction, and a plurality of storage units arranged in M rows and 8 columns; wherein M and N are positive integers; and wherein gate electrodes of storage units in a same row are connected with a same word line, source electrodes of storage units in every two adjacent rows are connected with a same source line, and drain electrodes of storage units in a same column are connected with a same bit line. There is no need to perform a decoding operation on source lines of the EEPROM and the EEPROM storage array, and a volume of the EEPROM is reduced.
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