Apparatus for manufacturing ingot and method of manufacturing ingot
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United States of America Patent
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Issued Date -
Sep 10, 2015
app pub date -
Apr 21, 2014
filing date -
Mar 7, 2014
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Abstract
Disclosed are an apparatus for manufacturing an ingot and a method of manufacturing the ingot to control a concentration of dopant. The apparatus for manufacturing an ingot to intermittently or continuously feed silicon while an ingot is grown, includes: a crucible having a melting zone in which the silicon and dopant are melted; an inner wall surrounded by the crucible, and having a growth zone in which the melted silicon and the dopant are introduced so that the ingot is grown in the inner zone; and a feeding unit feeding the silicon into the melting zone, wherein a ratio of a feed rate of the silicon fed through the feeding unit to a growth rate of the ingot is changed.
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