Tensile strained semiconductor photon emission and detection devices and integrated photonics system
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United States of America Patent
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Feb 23, 2016
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Sep 3, 2015
app pub date -
Apr 28, 2015
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Aug 12, 2011
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Abstract
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
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