Semiconductor Multilayer Structure And Semiconductor Element
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Sep 3, 2015
app pub date -
Feb 26, 2015
filing date -
Feb 28, 2014
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Abstract
A semiconductor multilayer structure includes a β-Ga2O3-based single crystal substrate including a dislocation density on a main surface of not more than 1×103/cm2; and a nitride semiconductor layer including an AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal epitaxially grown on the β-Ga2O3-based single crystal substrate.
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