Semiconductor Multilayer Structure And Semiconductor Element
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United States of America Patent
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Issued Date -
Sep 3, 2015
app pub date -
Feb 26, 2015
filing date -
Feb 28, 2014
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Abandoned
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Abstract
A semiconductor multilayer structure includes a β-Ga2O3-based single crystal substrate including a main surface including a (−201), (101), (310) or (3-10) plane, the β-Ga2O3-based single crystal substrate being free from any twinning plane or further including a region free from any twinning plane, the region including a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and the main surface, and a nitride semiconductor layer including an AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal epitaxially grown on the β-Ga2O3-based single crystal substrate.
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