SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICOUNDUCTOR DEVICE
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United States of America Patent
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app pub date -
May 8, 2015
filing date -
Jan 16, 2013
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Abstract
A forward termination structure that surrounds an active region is provided between the active region and a p+ isolation region. A reverse termination structure that surrounds the forward termination structure is provided between the forward termination structure and the p+ isolation region. The forward termination structure is formed of a plurality of first field limited rings (“FLR”) and a first filed plat (“FP”) conductively connected to the first FLR. The reverse termination structure is formed of a plurality of second FLR and second FP conductively connected to the second FLR. In the reverse termination structure, a second n-type region which is in contact with the p+ isolation region and which includes at least one of the second FLRs is provided on a surface layer of the front surface of an n− semiconductor substrate.
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