Semiconductor heterostructure and method of fabrication thereof
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United States of America Patent
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Oct 18, 2016
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Sep 3, 2015
app pub date -
Oct 17, 2013
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Oct 17, 2012
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Abstract
A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III) (V), wherein (III) represents one or more group-III elements and (V) represents one or more group-V elements, an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a compound semiconductor layer with (III)x>1(V)2-x, and wherein the intermediate layer has a thickness of 10 monolayers or below, and a second semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III)1(V)1.
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