Memory Cells and Methods Of Forming Memory Cells
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United States of America Patent
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app pub date -
May 14, 2015
filing date -
Oct 7, 2011
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Abstract
A memory cell includes a transistor device comprising a pair of source/drains, a body comprising a channel, and a gate construction operatively proximate the channel. The memory cell includes a capacitor comprising a pair of capacitor electrodes having a capacitor dielectric there-between. One of the capacitor electrodes is the channel or is electrically coupled to the channel. The other of the capacitor electrodes includes a portion of the body other than the channel. Methods are also disclosed.
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