Semiconductor integrated circuit
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United States of America Patent
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Nov 29, 2016
Grant Date -
Sep 3, 2015
app pub date -
May 8, 2015
filing date -
Jun 11, 2013
priority date (Note) -
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Abstract
An input signal having a high level or a low level is input to a pad. A first protection element includes a first transistor configured as an N-channel MOSFET designed so as to withstand ESD. A second protection element includes a second transistor configured as a P-channel MOSFET designed so as to withstand ESD. A capacitance element is connected to a second line, and forms an RC filter together with a filter resistor. The capacitance element includes at least one from among a third transistor having the same device structure as that of the first transistor and a fourth transistor having the same device structure as that of the second transistor.
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