Differential silicon oxide etch
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 6, 2018
Issued Date -
N/A
app pub date -
May 15, 2015
filing date -
Sep 17, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.
First Claim
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International Classification(s)
- 2015 Application Filing Year
- H01J Class
- 2290 Applications Filed
- 1843 Patents Issued To-Date
- 80.49 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 108 Citation Count
- H01J Class
- 99.96 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 6, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 6, 2029 |
