METHOD OF FABRICATING NITRIDE FILM AND METHOD OF CONTROLLING COMPRESSIVE STRESS OF THE SAME
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United States of America Patent
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Sep 3, 2015
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Feb 25, 2015
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Feb 28, 2014
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Abstract
The present invention relates to a method of fabricating a nitride film, which may easily control compressive stress while stably maintaining the film quality using the atomic layer deposition, and the nitride film having compressive stress is formed on a substrate by performing a unit cycle at least one time, the unit cycle including: a first step of providing a source gas on the substrate to absorb at least of the source gas on the substrate; a second step of providing a first purge gas on the substrate; a third step of forming a unit deposition film on the substrate by providing the substrate with a stress controlling gas including a nitrogen gas (N2) and a reaction gas containing nitrogen components (N) other than the nitrogen gas (N2) in a plasma state; and a fourth step of providing a second purge gas on the substrate.
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