Memory reading circuit, memory device and method of operating memory device

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United States of America Patent

PATENT NO 9489991
APP PUB NO 20150248923A1
SERIAL NO

14193412

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Abstract

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A circuit for reading a memory device includes a sense amplifier (SA) and a controller. The SA has an input, an output and an enabling terminal. The controller has a first input coupled to the output of the SA, a second input configured to receive a control signal, and an output coupled to the enabling terminal of the SA to send an SA enabling (SAE) signal from the controller to the SA. The controller is configured to start the SAE signal, in response to the control signal, to enable the SA, and to terminate the SAE signal, in response to an SA output signal at the output of the SA, to disable the SA.

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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jonathan Tsung-Yung Hsinchu, TW 131 785
Cheng, Chiting Taichung, TW 77 690
Ko, Hsin-Hsin Hsinchu, TW 6 205
Lee, Cheng Hung Hsinchu, TW 175 913
Lin, Yangsyu New Taipei, TW 77 366

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2621581362137774127158742501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400150016001700

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