RECESSED IRMN READER SENSOR DESIGN WITH HIGH HK APPLIED TO BOTH REFERENCE AND PIN LAYERS
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United States of America Patent
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Issued Date -
Sep 3, 2015
app pub date -
Feb 28, 2014
filing date -
Feb 28, 2014
priority date (Note) -
Abandoned
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Abstract
The embodiments disclosed generally relate to a magnetic read head having a recessed antiferromagnetic layer and a recessed pinned magnetic layer. The recessed pinned magnetic layer is only partially recessed from the MFS, but the recess amount is the same amount as the antiferromagnetic layer. The recess is between about 50 nm and about 200 nm. Processing the pinned magnetic layer and the antiferromagnetic layer and its seed layers at an oblique angle results in an increase in the anisotropy field.
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