Method and structure for lithography processes with focus monitoring and control
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United States of America Patent
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Jul 5, 2016
Grant Date -
Sep 3, 2015
app pub date -
Mar 3, 2014
filing date -
Mar 3, 2014
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Abstract
A method for lithography exposing process is provided. The method includes performing a first lithography exposing process to a resist layer using a mask having a focus-sensitive pattern and an energy-sensitive pattern; measuring critical dimensions (CDs) of transferred focus-sensitive pattern and transferred energy-sensitive pattern on the resist layer; extracting Bossung curves from the CDs; and determining slopes of the Bossung curves.
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