Method of using an EUV mask during EUV photolithography processes
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United States of America Patent
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Dec 22, 2015
Grant Date -
Sep 3, 2015
app pub date -
May 13, 2015
filing date -
Nov 15, 2013
priority date (Note) -
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Abstract
The present disclosure is directed to various masks for use during EUV photolithography processes. In one example, an EUV mask is disclosed that includes, among other things, a substrate, a multilayer stack comprised of a plurality of multilayer pairs of ruthenium and silicon formed above the substrate, wherein the mask is adapted to, when irradiated with EUV light, have an effective reflective plane that is positioned 32 nm or less below an uppermost surface of the multilayer stack and a capping layer positioned above the uppermost surface of the multilayer stack.
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