Resist overlayer film forming composition for lithography and method for manufacturing semiconductor device using the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 15, 2016
Grant Date -
Sep 3, 2015
app pub date -
Aug 30, 2013
filing date -
Sep 7, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A resist overlayer film forming composition that is used for a lithography process for manufacturing semiconductor devices, and selectively transmits EUV only, in particular, by blocking exposure light undesirable for EUV exposure, such as UV and DUV, without intermixing with a resist, and that can be developed with a developing solution after exposure. A resist overlayer film forming composition including: a hydroxyl group-containing novolac-based polymer containing a structure of (Formula 1-1):
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully