Monitoring method and apparatus for control of excimer laser annealing
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United States of America Patent
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May 10, 2016
Grant Date -
Sep 3, 2015
app pub date -
Mar 3, 2014
filing date -
Mar 3, 2014
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Abstract
A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystallized layer dependent on the number of and energy density ED in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A microscope image of the illuminated area is made from light diffracted from the illuminated are by the periodic features. The microscope image includes corresponding periodic features. The ED is determined from a measure of the contrast of the periodic features in the microscope image.
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